Product Datasheet Search Results:
8 Pages, 216 KB, Scan- IRFV064
- Infineon Technologies Ag
- Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-258AA
8 Pages, 216 KB, Scan- IRFV064D
- International Rectifier
- 45 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
8 Pages, 216 KB, Scan- IRFV064U
- International Rectifier
- 45 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
1 Pages, 28 KB, Scan- IRFV064
- International Rectifier
- 45 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
8 Pages, 216 KB, Scan- IRFV064D
- International Rectifier
- 45 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
8 Pages, 216 KB, Scan- IRFV064DPBF
- International Rectifier
- 45 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
1 Pages, 28 KB, Scan- IRFV064PBF
- International Rectifier
- 45 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
8 Pages, 216 KB, Scan- IRFV064U
- International Rectifier
- 45 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
8 Pages, 216 KB, Scan- IRFV064UPBF
- International Rectifier
- 45 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
Product Details Search Results:
Infineon.com/IRFV064
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"45(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-258AA","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1456 Bytes - 20:24:55, 01 December 2024
Irf.com/IRFV064
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"620 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"45 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0170 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 ...
1422 Bytes - 20:24:55, 01 December 2024
Irf.com/IRFV064D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"620 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"45 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0170 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...
1444 Bytes - 20:24:55, 01 December 2024
Irf.com/IRFV064DPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"620 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"45 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0170 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL","FET Te...
1513 Bytes - 20:24:55, 01 December 2024
Irf.com/IRFV064PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"620 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"45 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0170 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXI...
1490 Bytes - 20:24:55, 01 December 2024
Irf.com/IRFV064U
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"620 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"45 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0170 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...
1447 Bytes - 20:24:55, 01 December 2024
Irf.com/IRFV064UPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"620 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"45 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0170 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL","FET Te...
1513 Bytes - 20:24:55, 01 December 2024
