Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"33(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"150(V)","Packaging":"Rail/Tube","Power Dissipation":"144(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"33(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"150(V)","Packaging":"Rail/Tube","Power Dissipation":"144(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"33(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"150(V)","Packaging":"Tape and Reel","Power Dissipation":"144(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"5V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"33A (Tc)","Gate Charge (Qg) @ Vgs":"26nC @ 10V","Product Photos":"TO-252-3","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"42 mOhm @ 21A, 10V","Da...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"109 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"33 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0420 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"N-CHAN...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"5V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"33A (Tc)","Gate Charge (Qg) @ Vgs":"26nC @ 10V","Product Photos":"TO-252-3","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"42 mOhm @ 21A, 10V","Da...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"109 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"33 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0420 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"N-CHAN...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"5V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"33A (Tc)","Gate Charge (Qg) @ Vgs":"26nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"42 mOhm @ 21A, ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"5V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"33A (Tc)","Gate Charge (Qg) @ Vgs":"26nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"42 mOhm @ 21A, 10V","Datasheets":"IRFR/IRFU461...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"109 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"33 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0420 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"N-CHAN...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"109 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"33 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0420 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"140 A","Channel Type":"N-CHAN...