Product Datasheet Search Results:
6 Pages, 175 KB, Scan- IRFR224TR
- International Rectifier
- 250V Single N-Channel HEXFET Power MOSFET in a D-Pak package
6 Pages, 175 KB, Scan- IRFR224TRL
- International Rectifier
- 250V Single N-Channel HEXFET Power MOSFET in a D-Pak package
6 Pages, 175 KB, Scan- IRFR224TRR
- International Rectifier
- 250V Single N-Channel HEXFET Power MOSFET in a D-Pak package
11 Pages, 311 KB, Original- IRFR224TR
- Vishay [siliconix]
- MOSFET N-CH 250V 3.8A DPAK - IRFR224TR
11 Pages, 311 KB, Original- IRFR224TRL
- Vishay [siliconix]
- MOSFET N-CH 250V 3.8A DPAK - IRFR224TRL
11 Pages, 311 KB, Original- IRFR224TRLPBF
- Vishay [siliconix]
- MOSFET N-CH 250V 3.8A DPAK - IRFR224TRLPBF
11 Pages, 311 KB, Original- IRFR224TRPBF
- Vishay [siliconix]
- MOSFET N-CH 250V 3.8A DPAK - IRFR224TRPBF
11 Pages, 311 KB, Original- IRFR224TRR
- Vishay [siliconix]
- MOSFET N-CH 250V 3.8A DPAK - IRFR224TRR
11 Pages, 526 KB, Original- IRFR224TRRPBF
- Vishay Presicion Group
- 3.8 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Product Details Search Results:
Siliconix_vishay/IRFR224TRPBF
858 Bytes - 07:57:14, 04 December 2024
Vishay.com/IRFR224TR
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"2,000","Supplier Device Package":"D-Pak","Datasheets":"IRFR224, IRFU224","Rds On (Max) @ Id, Vgs":"1.1 Ohm @ 2.3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount","Drain to So...
1540 Bytes - 07:57:14, 04 December 2024
Vishay.com/IRFR224TRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"3,000","Supplier Device Package":"D-Pak","Datasheets":"IRFR224, IRFU224","Rds On (Max) @ Id, Vgs":"1.1 Ohm @ 2.3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount","Drain to So...
1548 Bytes - 07:57:14, 04 December 2024
Vishay.com/IRFR224TRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Supplier Device Package":"D-Pak","Datasheets":"IRFR224, IRFU224","Rds On (Max) @ Id, Vgs":"1.1 Ohm @ 2.3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Standard Package":"3,000","PCN Assembly/Origin":"SIL-069-2014-Rev-0 23...
1625 Bytes - 07:57:14, 04 December 2024
Vishay.com/IRFR224TRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"3.8A (Tc)","Gate Charge (Qg) @ Vgs":"14nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"SIL-069-2014-Rev-0 23/May/2014","Rds On (Max) @ Id, Vgs":"1.1 Ohm @ 2.3A, 10V","Datasheets":"IRFR224, IRFU224","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"2,000","Drain to Source ...
1749 Bytes - 07:57:14, 04 December 2024
Vishay.com/IRFR224TRR
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"3,000","Supplier Device Package":"D-Pak","Datasheets":"IRFR224, IRFU224","Rds On (Max) @ Id, Vgs":"1.1 Ohm @ 2.3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount","Drain to So...
1547 Bytes - 07:57:14, 04 December 2024
Vishay.com/IRFR224TRRPBF
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"130 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.1 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL","FET Techn...
1591 Bytes - 07:57:14, 04 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRFR220N.pdf | 0.14 | 1 | Request |
