Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Package \/ Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"16A (Tc)","Gate Charge (Qg) @ Vgs":"150nC @ 10V","Product Photos":"TO-247-3","PCN Assembly\/Origin":"SIL-003-2014-Rev-0 14\/Feb\/2014","Rds On (Max) @ Id, Vgs":"300 mOhm @ 9.6A, 10V","Datasheets":"IRFP350","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package"...

{"Category":"Power MOSFET","Dimensions":"15.87 x 5.31 x 20.82 mm","Maximum Continuous Drain Current":"16 A","Width":"5.31 mm","Maximum Drain Source Voltage":"400 V","Package Type":"TO-247AC","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 150 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"16 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"2600 pF @ 25 V","...