Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"30(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail/Tube","Power Dissipation":"214(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"30(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail/Tube","Power Dissipation":"214(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"30(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail/Tube","Power Dissipation":"214(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"30A (Tc)","Gate Charge (Qg) @ Vgs":"123nC @ 10V","Product Photos":"TO-247AC Pkg","PCN Assembly/Origin":"Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"75 mOhm @ 18A, 10V","Datasheets":"IRFP250MPBF","FET Type":"MOSFET N-Channel, Metal ...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"315 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"30(A)","Mounting":"Through Hole","Noise Figure":"Not Required dB","Drain-Source On-Volt":"200(V)","Frequency (Max)":"Not Required MHz","Pin Count":"3 +Tab","Packaging":"Rail/Tube","Power Dissipation":"214(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-247AC","Output Power (Max)":"Not Required W","Rad Hardened":"No","Power Gain ":"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"30A (Tc)","Gate Charge (Qg) @ Vgs":"123nC @ 10V","Product Photos":"TO-247AC Pkg","PCN Design/Specification":"Alternative Leadframe and Die Attach 11/Jun/2013 Pb/Sn/Ag Material Update 09/Feb/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"75 mOhm @ 18A, 10V","Da...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"85 mOhm @ 18A, 10V","FET Feature":"Standard","Product Photos":"TO-247","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"30","Supplier Device Package":"TO-247AD","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRFP250","Power - Max":"190W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"200V","Current - Continuous Drai...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2850pF @ 25V","Series":"PowerMESH\u2122 II","Standard Package":"30","Supplier Device Package":"TO-247-3","Datasheets":"IRFP250","Rds On (Max) @ Id, Vgs":"85 mOhm @ 16A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"180W","Package / Case":"TO-247-3","Mounting Type":"Through Hole"...

{"C(iss) Max. (F)":"2.0n","Absolute Max. Power Diss. (W)":"180","V(BR)DSS (V)":"200","g(fs) Max, (S) Trans. conduct,":"19","I(D) Abs. Max.(A) Drain Curr.":"21","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"85m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"130","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"13","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"17","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th ...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"410 mJ","Package Shape":"RECTANGULAR","Status":"TRANSFERRED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0850 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"120 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...