Product Datasheet Search Results:
- IRFM140
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-254AA
- IRFM140D
- International Rectifier
- 28 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- IRFM140U
- International Rectifier
- 28 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- IRFM140
- International Rectifier
- 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- IRFM140D
- International Rectifier
- 28 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- IRFM140DPBF
- International Rectifier
- 28 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- IRFM140PBF
- International Rectifier
- 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- IRFM140U
- International Rectifier
- 28 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- IRFM140UPBF
- International Rectifier
- 28 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- IRFM140
- Semelab Plc.
- 28 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- IRFM140-JQR-B
- Semelab Plc.
- 28 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
Product Details Search Results:
Infineon.com/IRFM140
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"125(W)","Continuous Drain Current":"28(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-254AA","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1463 Bytes - 10:37:56, 22 November 2024
Irf.com/IRFM140
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","T...
1420 Bytes - 10:37:56, 22 November 2024
Irf.com/IRFM140D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...
1441 Bytes - 10:37:56, 22 November 2024
Irf.com/IRFM140DPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technolo...
1508 Bytes - 10:37:56, 22 November 2024
Irf.com/IRFM140PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0770 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEM...
1487 Bytes - 10:37:56, 22 November 2024
Irf.com/IRFM140U
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...
1443 Bytes - 10:37:56, 22 November 2024
Irf.com/IRFM140UPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technolo...
1510 Bytes - 10:37:56, 22 November 2024
Semelab.co.uk/IRFM140
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdow...
1486 Bytes - 10:37:56, 22 November 2024
Semelab.co.uk/IRFM140-JQR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdow...
1522 Bytes - 10:37:56, 22 November 2024
Semelab.co.uk/IRFM140-JQR-BR1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"TO-254, 3 PIN","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Channel Type":"N-CHANNEL","Drain Current-Max (ID)":"28 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configur...
1391 Bytes - 10:37:56, 22 November 2024
Semelab.co.uk/IRFM140R1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"112 A","Channel Type":"N-CHANNEL","FET Tech...
1543 Bytes - 10:37:56, 22 November 2024
Documentation and Support
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6FM1400-7UA30-0MA0.pdf | 8.13 | 1 | Request | |
6FM1400-7UA30-1MA5.pdf | 8.13 | 1 | Request |