Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"3.6(W)","Continuous Drain Current":"28(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"PQFN EP","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Package \/ Case":"8-VQFN","Current - Continuous Drain (Id) @ 25\u00b0C":"28A (Ta), 100A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"8-QFN","PCN Assembly\/Origin":"Mosfet Backend Wafer Processing 23\/Oct\/2013 Additional Assembly Site 23\/Jul\/2014 Assembly Site Revision 03\/Feb\/2015 Product Assembly Notification 10\/Feb\/2015","Product Training Modules":"High Voltage Integrated ...