Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"1.4(W)","Continuous Drain Current":"0.75(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"MO-036AB","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"14","Number of Elements":"4"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.7500 A","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.73 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channe...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.7500 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.73 ohm","Transistor Type":"GENERAL PURPOSE POWE...