Product Datasheet Search Results:
5 Pages, 193 KB, Scan- IRFF9230
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 327 KB, Original- IRFF9230
- Intersil Corporation
- -4.0A, -200V, 0.800 ?, P-Channel Power MOSFET
7 Pages, 131 KB, Original- IRFF9230
- International Rectifier
- 4 A, 200 V, 1.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
7 Pages, 131 KB, Original- IRFF9230PBF
- International Rectifier
- 4 A, 200 V, 1.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
1 Pages, 12 KB, Original- IRFF9230
- Semelab Plc.
- 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
1 Pages, 12 KB, Original- IRFF9230-JQR-B
- Semelab Plc.
- 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
1 Pages, 12 KB, Original- IRFF9230-JQR-BR1
- Semelab Plc.
- 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
1 Pages, 12 KB, Original- IRFF9230R1
- Semelab Plc.
- 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Irf.com/IRFF9230
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.68 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200...
1452 Bytes - 02:06:59, 11 March 2025
Irf.com/IRFF9230PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.68 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXI...
1521 Bytes - 02:06:59, 11 March 2025
Semelab.co.uk/IRFF9230
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source O...
1312 Bytes - 02:06:59, 11 March 2025
Semelab.co.uk/IRFF9230-JQR-B
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source O...
1348 Bytes - 02:06:59, 11 March 2025
Semelab.co.uk/IRFF9230-JQR-BR1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Channel Type":"P-CHANNEL","Drain Current-Max (ID)":"4 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":...
1410 Bytes - 02:06:59, 11 March 2025
Semelab.co.uk/IRFF9230R1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Channel Type":"P-CHANNEL","Drain Current-Max (ID)":"4 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":...
1373 Bytes - 02:06:59, 11 March 2025
