Product Datasheet Search Results:
1 Pages, 36 KB, Scan- IRFF110
- Motorola / Freescale Semiconductor
- N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor.
5 Pages, 174 KB, Scan- IRFF110
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A.
2 Pages, 126 KB, Scan- IRFF110
- General Electric
- Power Transistor Data Book 1985
5 Pages, 179 KB, Scan- IRFF110
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 190 KB, Scan- IRFF110R
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 866 KB, Original- IRFF110
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 3.5A 3-Pin TO-39
7 Pages, 327 KB, Original- IRFF110
- Intersil Corporation
- 3.5A, 100V, 0.600 ?, N-Channel Power MOSFET
7 Pages, 131 KB, Original- IRFF110
- International Rectifier
- 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
7 Pages, 131 KB, Original- IRFF110PBF
- International Rectifier
- 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
1 Pages, 41 KB, Original- IRFF110R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
Infineon.com/IRFF110
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"15(W)","Continuous Drain Current":"3.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1441 Bytes - 04:30:18, 28 October 2024
Irf.com/IRFF110
{"Terminal Finish":"NICKEL GOLD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"68 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1455 Bytes - 04:30:18, 28 October 2024
Irf.com/IRFF110PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"68 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL...
1521 Bytes - 04:30:18, 28 October 2024
Semelab.co.uk/IRFF110
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source...
1311 Bytes - 04:30:18, 28 October 2024
Semelab.co.uk/IRFF110-JQR-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source...
1346 Bytes - 04:30:18, 28 October 2024
Semelab.co.uk/IRFF110-JQR-BR1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Channel Type":"N-CHANNEL","Drain Current-Max (ID)":"3.5 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape...
1406 Bytes - 04:30:18, 28 October 2024
Semelab.co.uk/IRFF110R1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL, TO-39, 3 PIN","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Channel Type":"N-CHANNEL","Drain Current-Max (ID)":"3.5 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape...
1366 Bytes - 04:30:18, 28 October 2024
Various/IRFF110R
{"C(iss) Max. (F)":"135p","Absolute Max. Power Diss. (W)":"15","V(BR)DSS (V)":"100","g(fs) Max, (S) Trans. conduct,":"1.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"25n","r(DS)on Max. (Ohms)":"600m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"14","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"1.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","...
1264 Bytes - 04:30:18, 28 October 2024
Documentation and Support
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