Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)x Series Side 1 IR(F,L)x Series Side 2","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"3.1A (Tc)","Gate Charge (Qg) @ Vgs":"80nC @ 10V","Product Photos":"TO-220AB","Rds On (Max) @ Id, Vgs":"5 Ohm @ 1.9A, 10V","Datasheets":"IRFBG30 Packaging Information","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"50","Drain to Source Voltage (...

{"Category":"Power MOSFET","Dimensions":"10.51 x 4.65 x 15.49 mm","Maximum Continuous Drain Current":"3.1 A","Width":"4.65 mm","Maximum Drain Source Voltage":"1000 V","Package Type":"TO-220AB","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 80 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"12 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"980 pF @ 25 V","...