Product Datasheet Search Results:
1 Pages, 41 KB, Scan- IRFBE20-001
- Vishay Presicion Group
- 1.8 A, 800 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET
1 Pages, 41 KB, Scan- IRFBE20-001PBF
- Vishay Presicion Group
- 1.8 A, 800 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Vishay.com/IRFBE20-001
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"7.2 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuratio...
1361 Bytes - 01:07:03, 21 December 2024
Vishay.com/IRFBE20-001PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"6.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volt...
1423 Bytes - 01:07:03, 21 December 2024
Documentation and Support
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|---|---|---|---|---|
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| FR-E820-0015SCEPB.pdf | 23.36 | 1 | Request |
