Product Datasheet Search Results:
10 Pages, 288 KB, Original- IRF8910PBF
- Infineon Technologies Americas Corp.
- MOSFET 2N-CH 20V 10A 8-SOIC
10 Pages, 288 KB, Original- IRF8910PBF
- International Rectifier
- MOSFET 2N-CH 20V 10A 8-SOIC - IRF8910PBF
11 Pages, 271 KB, Original- IRF8910PBF
- Vishay Presicion Group
- 10 A, 20 V, 0.0134 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Infineon.com/IRF8910PBF
1033 Bytes - 07:42:39, 01 December 2024
Irf.com/IRF8910PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.55V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"10A","Gate Charge (Qg) @ Vgs":"11nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @...
2082 Bytes - 07:42:39, 01 December 2024
Vishay.com/IRF8910PBF
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Avalanche Energy Rating (Eas)":"19 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0134 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Ma...
1559 Bytes - 07:42:39, 01 December 2024
