Product Datasheet Search Results:

AUIRF8736M2TR.pdf12 Pages, 498 KB, Original
AUIRF8736M2TR
Infineon Technologies Ag
Trans MOSFET N-CH Si 40V 27A Automotive 9-Pin Direct-FET M4 T/R
IRF8736PBF.pdf9 Pages, 250 KB, Original
IRF8736PBF
Infineon Technologies Ag
Trans MOSFET N-CH 30V 18A 8-Pin SOIC Tube
IRF8736TRPBF.pdf9 Pages, 250 KB, Original
IRF8736TRPBF
Infineon Technologies Ag
Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R
AUIRF8736M2TR.pdf13 Pages, 503 KB, Original
AUIRF8736M2TR
International Rectifier
MOSFET Auto FET 30V 18A 4.8Ohm 17nC MOSFET MOSFT 30V 18A 4.8mOhm 17nC Qg
IRF8736.pdf9 Pages, 252 KB, Original
IRF8736PBF.pdf9 Pages, 250 KB, Original
IRF8736PBF
International Rectifier
MOSFET N-CH 30V 18A 8-SOIC - IRF8736PBF
IRF8736TRPBF.pdf9 Pages, 250 KB, Original
IRF8736TRPBF
International Rectifier
MOSFET N-CH 30V 18A 8-SOIC - IRF8736TRPBF

Product Details Search Results:

Infineon.com/AUIRF8736M2TR
{"Polarity":"N","Gate-Source Voltage (Max)":"40(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"27(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"40(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"DIRECT-FET M4","Type":"Power MOSFET","Pin Count":"9","Number of Elements":"1"}...
1560 Bytes - 07:02:23, 01 December 2024
Infineon.com/IRF8736PBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Rail/Tube","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...
1477 Bytes - 07:02:23, 01 December 2024
Infineon.com/IRF8736TRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...
1492 Bytes - 07:02:23, 01 December 2024
Irf.com/AUIRF8736M2TR
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3.9V @ 150\u00b5A","Series":"HEXFET\u00ae","Standard Package":"4,800","Supplier Device Package":"DIRECTFET\u2122 M4","Datasheets":"AUIRF8736M2TR","Rds On (Max) @ Id, Vgs":"1.9 mOhm @ 85A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","PCN Packaging":"Package Drawing Update 19/Aug/2015","Package / Case":"Dir...
1575 Bytes - 07:02:23, 01 December 2024
Irf.com/IRF8736PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 50\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Ta)","Gate Charge (Qg) @ Vgs":"26nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Alternate Assembly Site 15/Apr/2014 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFET...
2124 Bytes - 07:02:23, 01 December 2024
Irf.com/IRF8736TRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 50\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Ta)","Gate Charge (Qg) @ Vgs":"26nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id,...
2102 Bytes - 07:02:23, 01 December 2024

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