Product Datasheet Search Results:

IRF830AS.pdf10 Pages, 162 KB, Original
IRF830AS
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)
IRF830ASPBF.pdf10 Pages, 663 KB, Original
IRF830ASTRL.pdf10 Pages, 162 KB, Original
IRF830ASTRR.pdf10 Pages, 162 KB, Original
IRF830AS.pdf9 Pages, 1097 KB, Original
IRF830AS
Vishay [siliconix]
MOSFET N-CH 500V 5A D2PAK - IRF830AS
IRF830ASPBF.pdf10 Pages, 211 KB, Original
IRF830ASPBF
Vishay [siliconix]
MOSFET N-CH 500V 5A D2PAK - IRF830ASPBF
IRF830ASTRL.pdf9 Pages, 1097 KB, Original
IRF830ASTRL
Vishay [siliconix]
MOSFET N-CH 500V 5A D2PAK - IRF830ASTRL
IRF830ASTRLPBF.pdf10 Pages, 211 KB, Original
IRF830ASTRLPBF
Vishay [siliconix]
MOSFET N-CH 500V 5.0A D2PAK - IRF830ASTRLPBF
IRF830ASTRR.pdf11 Pages, 186 KB, Original
IRF830ASTRR
Vishay Presicion Group
5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF830ASTRRPBF.pdf10 Pages, 663 KB, Original
IRF830ASTRRPBF
Vishay Presicion Group
5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Vishay.com/IRF830AS
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"620pF @ 25V","Series":"-","Standard Package":"50","Supplier Device Package":"D2PAK","Datasheets":"IRF830A,SiHF830A","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Moun...
1561 Bytes - 14:20:37, 23 December 2024
Vishay.com/IRF830ASPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Catalog Drawings":"IR(F,L,Z) Series Side 1 IR(F,L,Z) Series Side 2","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"5A (Tc)","Gate Charge (Qg) @ Vgs":"24nC @ 10V","Product Photos":"TO-263","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","Datasheets":"IRF830AS,AL, SiHF830AS,AL","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Packag...
1829 Bytes - 14:20:37, 23 December 2024
Vishay.com/IRF830ASTRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF830A,SiHF830A","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Drain ...
1572 Bytes - 14:20:37, 23 December 2024
Vishay.com/IRF830ASTRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF830AS,AL, SiHF830AS,AL","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount...
1611 Bytes - 14:20:37, 23 December 2024
Vishay.com/IRF830ASTRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.1 W","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":...
1548 Bytes - 14:20:37, 23 December 2024
Vishay.com/IRF830ASTRRPBF
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.1 W","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A"...
1633 Bytes - 14:20:37, 23 December 2024

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