Product Datasheet Search Results:
5 Pages, 158 KB, Scan- IRF822
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
4 Pages, 200 KB, Original- IRF822
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF822
- Frederick Components
- Power MOSFET Selection Guide
5 Pages, 165 KB, Scan- IRF822
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.
2 Pages, 125 KB, Scan- IRF822
- General Electric
- Power Transistor Data Book 1985
5 Pages, 176 KB, Scan- IRF822
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 190 KB, Scan- IRF822R
- Harris Semiconductor
- Power MOSFET Data Book 1990
1 Pages, 98 KB, Scan- IRF822
- International Rectifier
- TO-220 Plastic Package HEXFETs
1 Pages, 48 KB, Original- IRF822R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
St.com/IRF822FI
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"225 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Tec...
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Various/IRF822R
{"C(iss) Max. (F)":"360p","Absolute Max. Power Diss. (W)":"50","g(fs) Max, (S) Trans. conduct,":"2.3","I(D) Abs. Max.(A) Drain Curr.":"1.4","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"42n","r(DS)on Max. (Ohms)":"4.0","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"7.0","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"1.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.4","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...
1296 Bytes - 14:24:30, 22 September 2024
