Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"80(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"260(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"80(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"260(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"80(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"260(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"80(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"260(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"310 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0150 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"320 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"80(A)","Mounting":"Through Hole","Noise Figure":"Not Required dB","Drain-Source On-Volt":"100(V)","Frequency (Max)":"Not Required MHz","Pin Count":"3 +Tab","Packaging":"Rail/Tube","Power Dissipation":"260(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Output Power (Max)":"Not Required W","Rad Hardened":"No","Power Gain ":"...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"310 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0150 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"320 A","Channel Type":"N-C...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"80A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"15 mOhm @ 45A, 10V","Datasheets":"IRF8010PbF","FET Type":"MOSFET N-Channel, Metal O...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"80A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Alternate Assembly Site 11/Nov/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"15 mOhm @ 45A, 10V","Datasheets":"IRF8010SPbF(...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"80A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Alternate Assembly Site 11/Nov/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"15 mOhm @ 45A, 10V","Datasheets":"IRF8010SPbF(...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF8010SPbF(LPbF)","Rds On (Max) @ Id, Vgs":"15 mOhm @ 45A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"260W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mou...