Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"7 mOhm @ 16A, 4.5V","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"8-SOIC","Vgs(th) (Max) @ Id":"600mV @ 500\u00b5A","Series":"HEXFET\u00ae","Standard Package":"95","Supplier Device Package":"8-SO","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Packaging":"Tube","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"IRF7210PbF","Power - Max":"2.5W","Package \/ Case":"8-SOIC (0.154\", 3.90mm Wid...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...

{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd12 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"16 A","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"12 V","Frequency (Max)":"Not Required MHz","Pin Count":"8","Packaging":"Tape and Reel","Power Dissipation":"2.5 W","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Output Power (Max)":"Not Required W","Rad Hardened":"No","Power Gain ":"Not Requir...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"600mV @ 500\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"16A (Ta)","Gate Charge (Qg) @ Vgs":"212nC @ 5V","Product Photos":"8-SOIC","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"7 mOhm @ 16A, 4.5V","Datasheets":"IRF7210PbF","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltag...

{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd12 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"16 A","Mounting":"Surface Mount","Drain-Source On-Volt":"12 V","Pin Count":"8","Packaging":"Tape and Reel","Power Dissipation":"2.5 W","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.007 ohm","Number of Elements":"1"}...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.3 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On ...

{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"30","r(DS)on Max. (Ohms)":"1.8","I(GSS) Max. (A)":"500n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.8","@(VDS) (V) (Test Condition)":"20","Package":"TO-220AB","I(DSS) Min. (A)":"250u","Military":"N","t(r) Max. (s) Rise time":"50n","V(BR)DSS (V)":"350","t(f) Max. (s) Fall time.":"50n","g(fs) Min. (S) Trans. conduct.":"1.0","I(D) Abs. Drain Current (A)":"2.5"}...

{"C(iss) Max. (F)":"360p","Absolute Max. Power Diss. (W)":"50","g(fs) Max, (S) Trans. conduct,":"2.7","I(D) Abs. Max.(A) Drain Curr.":"2.1","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"45n","r(DS)on Max. (Ohms)":"2.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"13","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"1.8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.8","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packa...