Product Datasheet Search Results:
5 Pages, 142 KB, Scan- IRF641
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 18A, 150-200V
4 Pages, 200 KB, Original- IRF641
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF641
- Frederick Components
- Power MOSFET Selection Guide
5 Pages, 158 KB, Scan- IRF641
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A.
2 Pages, 127 KB, Scan- IRF641
- General Electric
- Power Transistor Data Book 1985
5 Pages, 201 KB, Scan- IRF641
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 204 KB, Scan- IRF641R
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 397 KB, Scan- IRF641
- Intersil Corporation
- Obsolete Product Datasheet
1 Pages, 44 KB, Original- IRF641
- International Rectifier
- TO-220 N-Channel HEXFET Power MOSFET
1 Pages, 41 KB, Original- IRF641R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
St.com/IRF641
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
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St.com/IRF641FI
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"72 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"150 V"...
1460 Bytes - 22:15:35, 21 September 2024
Various/IRF641R
{"C(iss) Max. (F)":"1.3n","Absolute Max. Power Diss. (W)":"125","g(fs) Max, (S) Trans. conduct,":"10","I(D) Abs. Max.(A) Drain Curr.":"11","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"68n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"72","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"6.7","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"10","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packag...
1293 Bytes - 22:15:35, 21 September 2024
