Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"150(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-262","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"67nC @ 10V","Product Photos":"HEXFET TO-262-3 Long Leads","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @ 11A, 10V","Datasheets":"IRF640N(S,L)PbF","FET Type":"MOSFET N-Channel, Metal Oxi...