Product Datasheet Search Results:
5 Pages, 166 KB, Scan- IRF622
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 7A, 150-200V
4 Pages, 200 KB, Original- IRF622
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF622
- Frederick Components
- Power MOSFET Selection Guide
5 Pages, 161 KB, Scan- IRF622
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A.
2 Pages, 125 KB, Scan- IRF622
- General Electric
- Power Transistor Data Book 1985
5 Pages, 170 KB, Scan- IRF622
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 184 KB, Scan- IRF622R
- Harris Semiconductor
- Power MOSFET Data Book 1990
1 Pages, 44 KB, Original- IRF622
- International Rectifier
- TO-220 N-Channel HEXFET Power MOSFET
1 Pages, 41 KB, Original- IRF622R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
Semelab.co.uk/IRF622
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source...
1299 Bytes - 16:36:34, 24 September 2024
St.com/IRF622FI
{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"30","I(GSS) Max. (A)":"500n","I(DSS) Min. (A)":"1.0m","t(r) Max. (s) Rise time":"60n","V(BR)DSS (V)":"200","t(f) Max. (s) Fall time.":"60n","@I(D) (A) (Test Condition)":"2.5","I(D) Abs. Drain Current (A)":"3.5","Package":"TO-220AB","Military":"N","g(fs) Min. (S) Trans. conduct.":"1.3","r(DS)on Max. (Ohms)":"1.2"}...
857 Bytes - 16:36:34, 24 September 2024
Various/IRF622R
{"C(iss) Max. (F)":"450p","Absolute Max. Power Diss. (W)":"40","g(fs) Max, (S) Trans. conduct,":"2.5","I(D) Abs. Max.(A) Drain Curr.":"2.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"1.2","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"16","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"1.3","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...
1296 Bytes - 16:36:34, 24 September 2024
