Product Datasheet Search Results:
- AUIRF6218S
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 150V 27A Automotive 3-Pin(2+Tab) D2PAK Tube
- IRF6218STRLPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH 150V 27A 3-Pin(2+Tab) D2PAK T/R
- AUIRF6218S
- International Rectifier
- MOSFET Automotive MOSFET 27A, 71 nC, D2Pak
- AUIRF6218STRL
- International Rectifier
- MOSFET Automotive MOSFET 27A, 71 nC, D2Pak
- AUIRF6218STRR
- International Rectifier
- MOSFET Automotive MOSFET 27A, 71 nC, D2Pak
- IRF6218S
- International Rectifier
- 27 A, 150 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
- IRF6218SPBF
- International Rectifier
- 27 A, 150 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
- IRF6218STRL
- International Rectifier
- 27 A, 150 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
- IRF6218STRLPBF
- International Rectifier
- MOSFET P-CH 150V 27A D2PAK - IRF6218STRLPBF
- IRF6218STRR
- International Rectifier
- 27 A, 150 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
- IRF6218STRRHR
- International Rectifier
- Trans MOSFET P-CH 150V 27A 3-Pin(2+Tab) D2PAK T/R
- IRF6218STRRPBF
- International Rectifier
- 27 A, 150 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Product Details Search Results:
Infineon.com/AUIRF6218S
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"27(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"150(V)","Packaging":"Rail/Tube","Power Dissipation":"250(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1557 Bytes - 05:26:40, 01 April 2025
Infineon.com/IRF6218STRLPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"27(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"150(V)","Packaging":"Tape and Reel","Power Dissipation":"250(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1516 Bytes - 05:26:40, 01 April 2025
Irf.com/AUIRF6218S
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"D\u00b2PAK","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF6218S/L","Rds On (Max) @ Id, Vgs":"150 mOhm @ 16A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Po...
1734 Bytes - 05:26:40, 01 April 2025
Irf.com/AUIRF6218STRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"27A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"TO-263","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @ 16A, 10V","Datasheets":"AUIRF6218S/L","FET Type":"MOSFET P-Channel, Metal Oxide","PCN Packaging...
1808 Bytes - 05:26:40, 01 April 2025
Irf.com/AUIRF6218STRR
{"Factory Pack Quantity":"800","Vds - Drain-Source Breakdown Voltage":"- 150 V","Transistor Polarity":"P-Channel","Rds On - Drain-Source Resistance":"150 mOhms","Brand":"International Rectifier","Id - Continuous Drain Current":"- 27 A","Mounting Style":"SMD/SMT","Packaging":"Reel","Product Category":"MOSFET","Qg - Gate Charge":"71 nC","Package / Case":"D-PAK-3","RoHS":"Details","Manufacturer":"International Rectifier"}...
1415 Bytes - 05:26:40, 01 April 2025
Irf.com/IRF6218S
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"210 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1523 Bytes - 05:26:40, 01 April 2025
Irf.com/IRF6218SPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"210 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"P-CHAN...
1601 Bytes - 05:26:40, 01 April 2025
Irf.com/IRF6218STRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"210 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1541 Bytes - 05:26:40, 01 April 2025
Irf.com/IRF6218STRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"27A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Additional Assembly Site 19/Mar/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"150 mOhm @ 16A, 10V","Datasheets":"IRF6218SPb...
2100 Bytes - 05:26:40, 01 April 2025
Irf.com/IRF6218STRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"210 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1539 Bytes - 05:26:40, 01 April 2025
Irf.com/IRF6218STRRHR
{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"27 A","Mounting":"Surface Mount","Drain-Source On-Volt":"150 V","Packaging":"Tape and Reel","Power Dissipation":"250 W","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1471 Bytes - 05:26:40, 01 April 2025
Irf.com/IRF6218STRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"210 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"P-CHAN...
1619 Bytes - 05:26:40, 01 April 2025
Documentation and Support
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