Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"33(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Packaging":"Rail\/Tube","Power Dissipation":"130(W)","Rad Hardened":"No","Package Type":"TO-262","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package \/ Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"TO-262","Datasheets":"IRF540NS\/NL","Rds On (Max) @ Id, Vgs":"44 mOhm @ 16A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"130W","Standard Package":"50","Input Capacitance (Ciss) @ Vds":"1960pF @ 2...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Current - Continuous Drain (Id) @ 25\u00b0C":"33A (Tc)","Gate Charge (Qg) @ Vgs":"71nC @ 10V","Product Photos":"HEXFET TO-262-3 Long Leads","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"44 mOhm @ 16A, 10V","Datasheets":"IRF540N(S,L)PbF","FET Type":"MOSFET N-Channel, Metal Oxid...