Product Datasheet Search Results:
11 Pages, 612 KB, Original- IRF530NL
- International Rectifier
- MOSFET N-CH 100V 17A TO-262 - IRF530NL
11 Pages, 612 KB, Original- IRF530NL-102
- International Rectifier
- 17 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 Pages, 612 KB, Original- IRF530NL-102PBF
- International Rectifier
- 17 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 Pages, 282 KB, Original- IRF530NLPBF
- International Rectifier
- 17 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Product Details Search Results:
Irf.com/IRF530NL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"TO-262","Datasheets":"IRF530NS/NL","Rds On (Max) @ Id, Vgs":"90 mOhm @ 9A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.8W","Standard Package":"50","Input Capacitance (Ciss) @ Vds":"920pF @ 25V",...
1476 Bytes - 06:31:17, 14 January 2025
Irf.com/IRF530NL-102
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"93 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"17 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET ...
1557 Bytes - 06:31:17, 14 January 2025
Irf.com/IRF530NL-102PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"93 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current...
1644 Bytes - 06:31:17, 14 January 2025
Irf.com/IRF530NLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"93 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current...
1620 Bytes - 06:31:17, 14 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF530NL.pdf | 0.60 | 1 | Request |
