Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"31A (Tc)","Gate Charge (Qg) @ Vgs":"63nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Mosfet D2Pak Assembly Site 9/Aug/2013 D2PAK Additional Assembly Site 17/Dec/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"60...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Turn-Off Delay Time":"39 ns","Description":"Value","Maximum Continuous Drain Current":"31 A","Package":"3D2PAK","Typical Turn-On Delay Time":"14 ns","Mounting":"Surface Mount","Typical Rise Time":"66 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"60@10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typical Fall Time":"63 ns"}...