Product Datasheet Search Results:

IRF530.pdf6 Pages, 181 KB, Scan
IRF530
Fairchild Semiconductor
N-Channel Power MOSFETs, 20 A, 60-100 V
IRF530A.pdf7 Pages, 255 KB, Original
IRF530A
Fairchild
MOSFET N-CH 100V 14A TO-220 - IRF530A
IRF530AJ69Z.pdf7 Pages, 255 KB, Original
IRF530AJ69Z
Fairchild Semiconductor Corporation
14 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF530A_NL.pdf7 Pages, 255 KB, Original
IRF530A_NL
Fairchild Semiconductor
100V N-Channel A-FET / Substitute of IRF530
IRF530N_R4942.pdf10 Pages, 118 KB, Original
IRF530N_R4942
Fairchild
MOSFET N-CH 100V 22A TO-220AB - IRF530N_R4942
IRF530.pdf4 Pages, 200 KB, Original
IRF530.pdf4 Pages, 200 KB, Original
IRF530
Frederick Components
Power MOSFET Selection Guide
IRF530.pdf2 Pages, 158 KB, Scan
IRF530
Motorola / Freescale Semiconductor
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
IRF530.pdf5 Pages, 163 KB, Scan
IRF530
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A.
IRF530.pdf2 Pages, 130 KB, Scan
IRF530
General Electric
Power Transistor Data Book 1985
IRF530.pdf5 Pages, 170 KB, Scan
IRF530
Harris Semiconductor
Power MOSFET Data Book 1990
IRF530R.pdf5 Pages, 188 KB, Scan
IRF530R
Harris Semiconductor
Power MOSFET Data Book 1990

Product Details Search Results:

Fairchildsemi.com/IRF530A
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220","Datasheets":"IRF530A TO220B03 Pkg Drawing","Rds On (Max) @ Id, Vgs":"110 mOhm @ 7A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"55W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"100V","Curre...
1627 Bytes - 22:49:23, 07 November 2024
Fairchildsemi.com/IRF530AJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"56 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"261 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"14 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Typ...
1491 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF5305PBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1524 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF5305SPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1502 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF5305STRLPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1518 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF5305STRRPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1518 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF530NPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"17(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"70(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1525 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF530NSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"17(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1508 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF530NSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"17(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1530 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF530NSTRRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"17(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1522 Bytes - 22:49:23, 07 November 2024
Irf.com/AUIRF5305TRL
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"31 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"P-CHAN...
1610 Bytes - 22:49:23, 07 November 2024
Irf.com/AUIRF5305TRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"31 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"P-CHAN...
1610 Bytes - 22:49:23, 07 November 2024

Documentation and Support

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