Product Datasheet Search Results:
- IRF530
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 20 A, 60-100 V
- IRF530AJ69Z
- Fairchild Semiconductor Corporation
- 14 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
- IRF530A_NL
- Fairchild Semiconductor
- 100V N-Channel A-FET / Substitute of IRF530
- IRF530N_R4942
- Fairchild
- MOSFET N-CH 100V 22A TO-220AB - IRF530N_R4942
- IRF530
- Fci Semiconductor
- POWER MOSFETs
- IRF530
- Frederick Components
- Power MOSFET Selection Guide
- IRF530
- Motorola / Freescale Semiconductor
- N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
- IRF530
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A.
- IRF530
- General Electric
- Power Transistor Data Book 1985
- IRF530
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRF530R
- Harris Semiconductor
- Power MOSFET Data Book 1990
Product Details Search Results:
Fairchildsemi.com/IRF530A
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220","Datasheets":"IRF530A TO220B03 Pkg Drawing","Rds On (Max) @ Id, Vgs":"110 mOhm @ 7A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"55W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"100V","Curre...
1627 Bytes - 22:49:23, 07 November 2024
Fairchildsemi.com/IRF530AJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"56 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"261 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"14 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Typ...
1491 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF5305PBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1524 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF5305SPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1502 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF5305STRLPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1518 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF5305STRRPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1518 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF530NPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"17(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"70(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1525 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF530NSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"17(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1508 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF530NSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"17(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1530 Bytes - 22:49:23, 07 November 2024
Infineon.com/IRF530NSTRRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"17(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1522 Bytes - 22:49:23, 07 November 2024
Irf.com/AUIRF5305TRL
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"31 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"P-CHAN...
1610 Bytes - 22:49:23, 07 November 2024
Irf.com/AUIRF5305TRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"31 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"P-CHAN...
1610 Bytes - 22:49:23, 07 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
IRF5305.pdf | 0.13 | 1 | Request | |
IRF530N.pdf | 0.16 | 1 | Request | |
IRF5305S.pdf | 0.18 | 1 | Request | |
IRF530NS.pdf | 0.60 | 1 | Request | |
IRF530NL.pdf | 0.60 | 1 | Request | |
IRF5305L.pdf | 0.18 | 1 | Request |