Product Datasheet Search Results:
8 Pages, 144 KB, Original- IRF520V
- International Rectifier
- 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
11 Pages, 131 KB, Original- IRF520VL
- International Rectifier
- 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF520VL with Standard Packaging
11 Pages, 131 KB, Original- IRF520VLPBF
- International Rectifier
- 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF520VL with Lead Free Packaging
8 Pages, 144 KB, Original- IRF520VPBF
- International Rectifier
- 100V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220AB package
11 Pages, 131 KB, Original- IRF520VS
- International Rectifier
- 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF520VS with Standard Packaging
11 Pages, 223 KB, Original- IRF520VSPBF
- International Rectifier
- Trans MOSFET N-CH 100V 9.6A 3-Pin(2+Tab) D2PAK
11 Pages, 223 KB, Original- IRF520VSTRL
- International Rectifier
- 9.6 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET
11 Pages, 223 KB, Original- IRF520VSTRLPBF
- International Rectifier
- 9.6 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET
11 Pages, 223 KB, Original- IRF520VSTRR
- International Rectifier
- 9.6 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET
11 Pages, 131 KB, Original- IRF520VSTRRPBF
- International Rectifier
- 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF520VS with lead-free packaging shipped on tape and reel right
Product Details Search Results:
Irf.com/IRF520VLPBF
936 Bytes - 04:46:50, 19 March 2025
Irf.com/IRF520VPBF
932 Bytes - 04:46:50, 19 March 2025
Irf.com/IRF520VSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"9.6 A","Mounting":"Surface Mount","Drain-Source On-Volt":"100 V","Pin Count":"2 +Tab","Power Dissipation":"44 W","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.165 ohm","Number of Elements":"1"}...
1468 Bytes - 04:46:50, 19 March 2025
Irf.com/IRF520VSTRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"44 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"37 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1530 Bytes - 04:46:50, 19 March 2025
Irf.com/IRF520VSTRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"44 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"37 A","Channel Type":"N...
1616 Bytes - 04:46:50, 19 March 2025
Irf.com/IRF520VSTRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"44 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"37 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1530 Bytes - 04:46:50, 19 March 2025
