Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"74(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","PCN Packaging":"Package Drawing Update 19\/Aug\/2015","Supplier Device Package":"D2PAK","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"20 mOhm @ 42A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Pow...