Product Datasheet Search Results:
5 Pages, 187 KB, Scan- IRF460
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 140 KB, Original- IRF460
- International Rectifier
- 21 A, 500 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
7 Pages, 140 KB, Original- IRF460PBF
- International Rectifier
- 21 A, 500 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
12 Pages, 1094 KB, Original- IRF460
- Ixys Corporation
- High Voltage Power MOSFETs
2 Pages, 17 KB, Original- IRF460
- Semelab Plc.
- 21 A, 500 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
2 Pages, 17 KB, Original- IRF460-JQR-B
- Semelab Plc.
- 21 A, 500 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
2 Pages, 17 KB, Original- IRF460-JQR-BR1
- Semelab Plc.
- 21 A, 500 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
2 Pages, 17 KB, Original- IRF460R1
- Semelab Plc.
- 21 A, 500 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
Product Details Search Results:
Irf.com/IRF460
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"1200 mJ","Package Shape":"ROUND","Status":"DISCONTINUED","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...
1493 Bytes - 14:38:38, 21 September 2024
Irf.com/IRF460PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"1200 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"...
1552 Bytes - 14:38:38, 21 September 2024
Semelab.co.uk/IRF460
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"84 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE WITH BUIL...
1326 Bytes - 14:38:38, 21 September 2024
Semelab.co.uk/IRF460-JQR-B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"84 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE WITH BUIL...
1361 Bytes - 14:38:38, 21 September 2024
Semelab.co.uk/IRF460-JQR-BR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN\/PEG","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...
1421 Bytes - 14:38:38, 21 September 2024
Semelab.co.uk/IRF460R1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN\/PEG","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdo...
1387 Bytes - 14:38:38, 21 September 2024
