Product Datasheet Search Results:

IRF430ED.pdf92 Pages, 2885 KB, Scan
IRF430ED
International Rectifier
4.5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF430EDPBF.pdf92 Pages, 2885 KB, Scan
IRF430EDPBF
International Rectifier
4.5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Product Details Search Results:

Irf.com/IRF430ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.1 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1425 Bytes - 13:55:15, 08 November 2024
Irf.com/IRF430EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.1 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1491 Bytes - 13:55:15, 08 November 2024

Documentation and Support

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