Product Datasheet Search Results:

IRF430E.pdf92 Pages, 2885 KB, Scan
IRF430E
International Rectifier
4.5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF430EA.pdf92 Pages, 2885 KB, Scan
IRF430EA
International Rectifier
4.5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF430EAPBF.pdf92 Pages, 2885 KB, Scan
IRF430EAPBF
International Rectifier
4.5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF430EB.pdf92 Pages, 2885 KB, Scan
IRF430EB
International Rectifier
4.5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF430EBPBF.pdf92 Pages, 2885 KB, Scan
IRF430EBPBF
International Rectifier
4.5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF430EC.pdf92 Pages, 2885 KB, Scan
IRF430EC
International Rectifier
4.5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF430ECPBF.pdf92 Pages, 2885 KB, Scan
IRF430ECPBF
International Rectifier
4.5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF430ED.pdf92 Pages, 2885 KB, Scan
IRF430ED
International Rectifier
4.5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF430EDPBF.pdf92 Pages, 2885 KB, Scan
IRF430EDPBF
International Rectifier
4.5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF430EPBF.pdf92 Pages, 2885 KB, Scan
IRF430EPBF
International Rectifier
4.5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Product Details Search Results:

Irf.com/IRF430E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.1 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1420 Bytes - 11:11:29, 08 November 2024
Irf.com/IRF430EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.1 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1428 Bytes - 11:11:29, 08 November 2024
Irf.com/IRF430EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.1 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1495 Bytes - 11:11:29, 08 November 2024
Irf.com/IRF430EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.1 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1424 Bytes - 11:11:29, 08 November 2024
Irf.com/IRF430EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.1 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1491 Bytes - 11:11:29, 08 November 2024
Irf.com/IRF430EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.1 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1426 Bytes - 11:11:29, 08 November 2024
Irf.com/IRF430ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.1 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1493 Bytes - 11:11:29, 08 November 2024
Irf.com/IRF430ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.1 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1425 Bytes - 11:11:29, 08 November 2024
Irf.com/IRF430EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.1 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1491 Bytes - 11:11:29, 08 November 2024
Irf.com/IRF430EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"1.1 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1487 Bytes - 11:11:29, 08 November 2024

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