Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"170(W)","Continuous Drain Current":"110(A)","Mounting":"Through Hole","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-262","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"TO-262","Datasheets":"IRF3205Z(S,L)","Rds On (Max) @ Id, Vgs":"6.5 mOhm @ 66A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"170W","Standard Package":"50","Input Capacitance (Ciss) @ Vds":"3450pF @ ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"HEXFET TO-262-3 Long Leads","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"6.5 mOhm @ 66A, 10V","Datasheets...