Product Datasheet Search Results:
11 Pages, 349 KB, Original- IRF2903ZSPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 30V 235A 3-Pin(2+Tab) D2PAK Tube
13 Pages, 397 KB, Original- IRF2903ZSTRLP
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 30V 260A Automotive 3-Pin(2+Tab) D2PAK T/R
13 Pages, 699 KB, Original- AUIRF2903ZS
- International Rectifier
- MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
13 Pages, 699 KB, Original- AUIRF2903ZSTRL
- International Rectifier
- MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
13 Pages, 699 KB, Original- AUIRF2903ZSTRR
- International Rectifier
- MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
13 Pages, 397 KB, Original- IRF2903ZS
- International Rectifier
- 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF2903ZS with Standard Packaging
11 Pages, 349 KB, Original- IRF2903ZSPBF
- International Rectifier
- MOSFET N-CH 30V 75A D2PAK - IRF2903ZSPBF
13 Pages, 397 KB, Original- IRF2903ZSTRLP
- International Rectifier
- MOSFET N-CH 30V 75A D2PAK - IRF2903ZSTRLP
11 Pages, 349 KB, Original- IRF2903ZSTRLPBF
- International Rectifier
- 75 A, 30 V, 0.0024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
11 Pages, 349 KB, Original- IRF2903ZSTRRP
- International Rectifier
- MOSFET N-CH 30V 75A D2PAK - IRF2903ZSTRRP
11 Pages, 349 KB, Original- IRF2903ZSTRRPBF
- International Rectifier
- 75 A, 30 V, 0.0024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Product Details Search Results:
Infineon.com/IRF2903ZSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"231(W)","Continuous Drain Current":"235(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"30(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1536 Bytes - 03:34:48, 07 January 2025
Infineon.com/IRF2903ZSTRLP
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"260(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"290(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1542 Bytes - 03:34:48, 07 January 2025
Irf.com/AUIRF2903ZS
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"160A (Tc)","Gate Charge (Qg) @ Vgs":"240nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"2.4 mOhm @ 75A, 10V","Datasheets":"AUIRF...
1877 Bytes - 03:34:48, 07 January 2025
Irf.com/AUIRF2903ZSTRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"160A (Tc)","Gate Charge (Qg) @ Vgs":"240nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"2.4 mOhm @ 75A, 10V","Datasheets":"AUIRF...
1844 Bytes - 03:34:48, 07 January 2025
Irf.com/AUIRF2903ZSTRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"231 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"160 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0024 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1020 A","Channel Type":"N-CH...
1635 Bytes - 03:34:48, 07 January 2025
Irf.com/IRF2903ZSPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"240nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds ...
1985 Bytes - 03:34:48, 07 January 2025
Irf.com/IRF2903ZSTRLP
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"240nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"2.4 mOhm @...
1901 Bytes - 03:34:48, 07 January 2025
Irf.com/IRF2903ZSTRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"820 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0024 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1020 A","Channel Type":"N-CHA...
1626 Bytes - 03:34:48, 07 January 2025
Irf.com/IRF2903ZSTRRP
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRF2903Z (S,L) PbF","Rds On (Max) @ Id, Vgs":"2.4 mOhm @ 75A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"231W","Package / Case":"TO-263-3...
1705 Bytes - 03:34:48, 07 January 2025
Irf.com/IRF2903ZSTRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"820 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0024 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1020 A","Channel Type":"N-CHA...
1627 Bytes - 03:34:48, 07 January 2025
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
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