Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"3270pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-262","Datasheets":"IRF2807Z(S,L)","Rds On (Max) @ Id, Vgs":"9.4 mOhm @ 53A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"170W","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-26...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"HEXFET TO-262-3 Long Leads","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"9.4 mOhm @ 53A, 10V","Datasheets":"IRF2807Z(S,L)PbF","FET Type":"MOSFET N-Channel, Metal ...

{"Category":"MOSFET","Maximum Drain Source Voltage":"75 V","Typical Rise Time":"79 ns","Typical Turn-Off Delay Time":"40 ns","Description":"Value","Maximum Continuous Drain Current":"89 A","Package":"3TO-262","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"18 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"9.4@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"45 ns"}...