Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRF1310NSPBF Saber Model IRF1310NSPBF Spice Model","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF1310NS/L","Rds On (Max) @ Id, Vgs":"36 mOhm @ 22A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.8W","Package / Case":"TO-263-3, D...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"420 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0360 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-M...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"56 ns","Typical Turn-Off Delay Time":"45 ns","Description":"Value","Maximum Continuous Drain Current":"42 A","Package":"3D2PAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"11 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"36@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"40 ns"}...