Product Datasheet Search Results:
- IRF1310NL
- International Rectifier
- MOSFET N-CH 100V 42A TO-262 - IRF1310NL
- IRF1310NLPBF
- International Rectifier
- 42 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Product Details Search Results:
Irf.com/IRF1310NL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"TO-262","Datasheets":"IRF1310NS/L","Rds On (Max) @ Id, Vgs":"36 mOhm @ 22A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.8W","Standard Package":"50","Input Capacitance (Ciss) @ Vds":"1900pF @ 25V...
1487 Bytes - 22:43:41, 04 January 2025
Irf.com/IRF1310NLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"420 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0360 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Curren...
1629 Bytes - 22:43:41, 04 January 2025
Documentation and Support
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IRF1310NL.pdf | 0.15 | 1 | Request |