Product Datasheet Search Results:
11 Pages, 129 KB, Original- IRF1010EL
- International Rectifier
- MOSFET N-CH 60V 84A TO-262 - IRF1010EL
10 Pages, 217 KB, Original- IRF1010ELPBF
- International Rectifier
- TRANS MOSFET N-CH 60V 84A 3TO-262
11 Pages, 129 KB, Original- IRF1010ELTRL
- International Rectifier
- 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 Pages, 129 KB, Original- IRF1010ELTRR
- International Rectifier
- 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Product Details Search Results:
Irf.com/IRF1010EL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"TO-262","Datasheets":"IRF1010ES(L)","Rds On (Max) @ Id, Vgs":"12 mOhm @ 50A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"200W","Standard Package":"50","Input Capacitance (Ciss) @ Vds":"3210pF @ 25...
1487 Bytes - 04:30:35, 26 November 2024
Irf.com/IRF1010ELPBF
938 Bytes - 04:30:35, 26 November 2024
Irf.com/IRF1010ELTRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"320 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0120 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"330 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...
1518 Bytes - 04:30:35, 26 November 2024
Irf.com/IRF1010ELTRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"320 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0120 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"330 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...
1516 Bytes - 04:30:35, 26 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF1010EL.pdf | 0.13 | 1 | Request |
