Product Datasheet Search Results:
10 Pages, 560 KB, Original- IPI60R299CP
- Infineon Technologies
- MOSFET N-CH 650V 11A I2PAK - IPI60R299CP
10 Pages, 555 KB, Original- IPI60R299CPXKSA1
- Infineon Technologies
- Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-262
Product Details Search Results:
Infineon.com/IPI60R299CP
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-262-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3.5V @ 440\u00b5A","Input Capacitance (Ciss) @ Vds":"1100pF @ 100V","Series":"CoolMOS\u2122","Standard Package":"500","Supplier Device Package":"PG-TO262-3","Product Training Modules":"CoolMOS\u2122 CP High Voltage MOSFETs Converters","Datasheets":"IPI60R299CP","Rds On (Max) @ Id, Vgs":"299 mOhm @ 6.6A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"...
1829 Bytes - 12:47:13, 25 November 2024
Infineon.com/IPI60R299CPXKSA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"650 V","Typical Rise Time":"5 ns","Typical Turn-Off Delay Time":"40 ns","Description":"Value","Maximum Continuous Drain Current":"11 A","Package":"3TO-262","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"10 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"299@10V mOhm","Manufacturer":"Infineon Technologies"}...
1517 Bytes - 12:47:13, 25 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
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| IPI60R299CP.pdf | 0.54 | 1 | Request |
