Product Datasheet Search Results:

IPI111N15N3G.pdf11 Pages, 734 KB, Original
IPI111N15N3G
Infineon Technologies Ag
83 A, 150 V, 0.0111 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
IPI111N15N3GAKSA1.pdf12 Pages, 735 KB, Original

Product Details Search Results:

Infineon.com/IPI111N15N3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"330 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"83 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0111 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"332 A","Channel Type":"N-CHANNEL",...
1561 Bytes - 02:41:53, 04 January 2025
Infineon.com/IPI111N15N3GAKSA1
{"Factory Pack Quantity":"500","Vds - Drain-Source Breakdown Voltage":"150 V","Transistor Polarity":"N-Channel","Tradename":"OptiMOS","Series":"IPI111N15","Brand":"Infineon Technologies","Id - Continuous Drain Current":"83 A","Packaging":"Tube","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"10.8 mOhms","Package / Case":"TO-262-3","Part # Aliases":"SP000680232","RoHS":"Details","Manufacturer":"Infineon"}...
1446 Bytes - 02:41:53, 04 January 2025

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