Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3.5V @ 46\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"59A (Tc)","Gate Charge (Qg) @ Vgs":"35nC @ 10V","Product Photos":"TO252-3","Rds On (Max) @ Id, Vgs":"12.2 mOhm @ 46A, 10V","Datasheets":"IPD122N10N3 G","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015","Drain...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"70 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"59 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0122 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"236 A","Channel Type":"N-CHANNEL","FET...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"59(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"94(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Product Category":"MOSFET","Series":"XPD122N10","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 80\u00b5A","Input Capacitance (Ciss) @ Vds":"2300pF @ 30V","Series":"OptiMOS\u2122","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Supplier Device Package":"PG-TO252-3","Datasheets":"IPD127N06L G","Rds On (Max) @ Id, Vgs":"12.7 mOhm @ 50A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"136W","Sta...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"240 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0127 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","China ...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"50(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Pin Count":"2 +Tab","Packaging":"Tape and Reel","Power Dissipation":"136(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.0127(ohm)","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 83\u00b5A","Input Capacitance (Ciss) @ Vds":"4320pF @ 50V","Series":"OptiMOS\u2122","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Supplier Device Package":"PG-TO252-3","Datasheets":"IP(B,D,I,P)12CN10N G","Rds On (Max) @ Id, Vgs":"12.4 mOhm @ 67A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"125W","St...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"67 A","Mounting":"Surface Mount","Drain-Source On-Volt":"100 V","Pin Count":"2 +Tab","Power Dissipation":"125 W","Operating Temp Range":"-55C to 175C","Package Type":"TO-252","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.0124 ohm","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 83\u00b5A","Input Capacitance (Ciss) @ Vds":"4320pF @ 50V","Series":"OptiMOS\u2122","Standard Package":"2,500","Supplier Device Package":"PG-TO252-3","Datasheets":"IPx12CN10N G","Rds On (Max) @ Id, Vgs":"12.4 mOhm @ 67A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"125W","Package / Case":"TO-252-3, DPak (2 Leads...

{"Polarity":"N","Drain-Source On-Res":"0.0124(ohm)","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"125(W)","Continuous Drain Current":"67(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...