Product Datasheet Search Results:
11 Pages, 652 KB, Original- IPB600N25N3G
- Infineon Technologies Ag
- 25 A, 250 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
12 Pages, 632 KB, Original- IPB600N25N3GATMA1
- Infineon Technologies
- MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
Product Details Search Results:
Infineon.com/IPB600N25N3G
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"210 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"25 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"250 V","...
1531 Bytes - 20:11:48, 16 December 2024
Infineon.com/IPB600N25N3GATMA1
{"Product Category":"MOSFET","Series":"XPB600N25","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1194 Bytes - 20:11:48, 16 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPB600N25N3G.pdf | 0.71 | 1 | Request |
