Datasheet.Directory

{"@I(C) (A) (Test Condition)":"2.0m","Viso Max.(V) Isolation Voltage":"7.5k","I(F) Max. (A) Forward Current":"100m","V(CE)sat Max.(V)":"500m","Package":"DIP","t(resp) Max.(s) Response Time":"6.0u","@V(CE) (V) (Test Condition)":"5.0","CTR Min.(%)Current Trans.Ratio":"12","P(D) Max.(W) Power Dissipation":"400m","V(BR)CEO (V) Breakdown Voltage":"20","Number of Channels":"2","@I(F) (A) (Test Condition)":"10m","Military":"N","V(F) Max.(V) Forward Voltage":"1.3"}...

{"Output Device":"Transistor","Isolation Voltage":"5300(V)","Operating Temperature Classification":"COMMERCIALC","Reverse Breakdown Voltage":"6(V)","Maximum Forward Current":"50(mA)","Rad Hardened":"No","Output Type":"DC","Standard":"BSI\/UL\/VDE","Power Dissipation":"0.17(W)","Forward Voltage":"1.65(V)","Package Type":"PDIP","Input Type":"DC","Mounting":"Through Hole","Operating Temp Range":"-25C to 100C","Current Transfer Ratio":"12.5(%)","Pin Count":"8","Number of Elements":"2"}...