Product Datasheet Search Results:
5 Pages, 22 KB, Original- HAT2020R
- Renesas Technology / Hitachi Semiconductor
- Silicon N-Channel Power MOS FET
11 Pages, 64 KB, Original- HAT2020R
- Renesas Electronics
- 8 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
1 Pages, 101 KB, Scan- HAT2020REL
- Renesas Electronics
- 8 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 104 KB, Original- HAT2020R-EL-E
- Renesas Electronics
- 8 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/HAT2020R
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"FP-8DA, SOP-8","Pulsed Drain Current-Max (IDM)":"64 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"8 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Packa...
1406 Bytes - 17:36:15, 05 January 2025
Renesas.com/HAT2020REL
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.0500 ohm","Number of Terminals":"8","DS Breakdo...
1254 Bytes - 17:36:15, 05 January 2025
Renesas.com/HAT2020R-EL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1529 Bytes - 17:36:15, 05 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| HQP2020R3.pdf | 0.04 | 1 | Request | |
| L2020RW.pdf | 0.04 | 1 | Request | |
| L2020RWBK.pdf | 0.04 | 1 | Request | |
| AHCL2020R.pdf | 0.04 | 1 | Request | |
| HQP2020R6.pdf | 0.04 | 1 | Request | |
| 7TAA122020R0306.pdf | 0.07 | 1 | Request | |
| 7TAA122020R0268.pdf | 0.07 | 1 | Request | |
| 7TAA262020R0182.pdf | 0.07 | 1 | Request | |
| 7TAA242020R0021.pdf | 0.09 | 1 | Request | |
| 7TAA262020R0225.pdf | 0.07 | 1 | Request | |
| 7TAA262020R0053.pdf | 0.07 | 1 | Request | |
| 7TAA262020R0078.pdf | 0.07 | 1 | Request |
