Product Datasheet Search Results:
8 Pages, 91 KB, Original- HAT2016R
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel Power MOS FET High Speed Power Switching
10 Pages, 53 KB, Original- HAT2016R(D)
- Hitachi Semiconductor
- Power switching MOSFET
12 Pages, 68 KB, Original- HAT2016R
- Renesas Electronics
- 6.5 A, 30 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
1 Pages, 101 KB, Scan- HAT2016REL
- Renesas Electronics
- 6.5 A, 30 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
10 Pages, 110 KB, Original- HAT2016R-EL-E
- Renesas Electronics
- 6.5 A, 30 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/HAT2016R
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"FP-8DA, SOP-8","Pulsed Drain Current-Max (IDM)":"52 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"6.5 A","Transistor Application":"SWITCHING","Number of Elements":"2","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Pac...
1434 Bytes - 11:34:46, 02 December 2024
Renesas.com/HAT2016REL
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.0800 ohm","Number of Terminals":"8","DS Break...
1256 Bytes - 11:34:46, 02 December 2024
Renesas.com/HAT2016R-EL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"52 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE ...
1558 Bytes - 11:34:46, 02 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 1SDX002016R1.pdf | 0.59 | 1 | Request | |
| 1TGE102016R0002.pdf | 0.08 | 1 | Request | |
| 1TGE102016R0004.pdf | 0.09 | 1 | Request | |
| 1SDA052016R1.pdf | 0.08 | 1 | Request | |
| 1SDX022016R1.pdf | 0.07 | 1 | Request | |
| 1SDX172016R1.pdf | 0.06 | 1 | Request | |
| 1SDX202016R1.pdf | 0.08 | 1 | Request | |
| 1SDX292016R1.pdf | 0.06 | 1 | Request | |
| NHP_102016R0001.pdf | 0.10 | 1 | Request | |
| 2TCZ172016R1940.pdf | 0.09 | 1 | Request | |
| 2TCZ172016R0040.pdf | 0.09 | 1 | Request | |
| 7GSP032016R0006.pdf | 0.09 | 1 | Request |
