Product Datasheet Search Results:
10 Pages, 96 KB, Original- HAF2012(L)
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET Series Power Switching
8 Pages, 38 KB, Original- HAF2012(L)-(S)
- Hitachi Semiconductor
- Thermal MOS FETs
8 Pages, 38 KB, Original- HAF2012(L)/(S)
- Hitachi Semiconductor
- Thermal MOS FETs
8 Pages, 38 KB, Original- HAF2012(L)
- Renesas Electronics
- 0.065 ohm, POWER, FET
Product Details Search Results:
Renesas.com/HAF2012(L)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Drain-source On Resistance-Max":"0.0650 ohm","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"3"}...
996 Bytes - 16:38:43, 08 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| UHAF204165A8445A11.pdf | 0.03 | 1 | Request |
