Product Datasheet Search Results:
1 Pages, 87 KB, Scan- HA1712F
- Api Electronics Group
- 8.2 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
1 Pages, 87 KB, Scan- HA1712F-2%
- Api Electronics Group
- 8.2 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
1 Pages, 87 KB, Scan- HA1712F-5%
- Api Electronics Group
- 8.2 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
2 Pages, 121 KB, Scan- HA1712F
- Msi Electronics, Inc.
- 30V Vrrm, 8.2pF Capacitance Varactor Diode
2 Pages, 121 KB, Scan- HA1712F-+2
- Msi Electronics, Inc.
- 30V Vrrm, 8.2pF Capacitance Varactor Diode
2 Pages, 121 KB, Scan- HA1712F-+5
- Msi Electronics, Inc.
- 30V Vrrm, 8.2pF Capacitance Varactor Diode
Product Details Search Results:
Apitech.com/HA1712F
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Breakdown Voltage-Min":"30 V","Terminal Form":"FLAT","Diode Capacitance Ratio-Min":"7","Package Style":"MICROWAVE","Variable Capacitance Diode Classification":"HYPERABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Number of Elements":"1","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1000","Terminal Position":"UNSPECIFIED","Diode Type":"VARIABLE CAPACITANCE DIODE...
1310 Bytes - 13:06:40, 11 March 2025
Apitech.com/HA1712F-2%
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Breakdown Voltage-Min":"30 V","Terminal Form":"FLAT","Diode Capacitance Ratio-Min":"7","Package Style":"MICROWAVE","Variable Capacitance Diode Classification":"HYPERABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Number of Elements":"1","Diode Cap Tolerance":"2 %","Quality Factor-Min":"1000","Terminal Position":"UNSPECIFIED","Diode Type":"VARIABLE CAPACITANCE DIODE"...
1324 Bytes - 13:06:40, 11 March 2025
Apitech.com/HA1712F-5%
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Breakdown Voltage-Min":"30 V","Terminal Form":"FLAT","Diode Capacitance Ratio-Min":"7","Package Style":"MICROWAVE","Variable Capacitance Diode Classification":"HYPERABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"8.2 pF","Number of Elements":"1","Diode Cap Tolerance":"5 %","Quality Factor-Min":"1000","Terminal Position":"UNSPECIFIED","Diode Type":"VARIABLE CAPACITANCE DIODE"...
1325 Bytes - 13:06:40, 11 March 2025
Various/HA1712F
{"C1/C2 Min. Capacitance Ratio":"7.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"1000","Package":"Micro-I","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"0","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
801 Bytes - 13:06:40, 11 March 2025
Various/HA1712F-+2
{"C1/C2 Min. Capacitance Ratio":"7.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"1000","Package":"Micro-I","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"0","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
817 Bytes - 13:06:40, 11 March 2025
Various/HA1712F-+5
{"C1/C2 Min. Capacitance Ratio":"7.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"1000","Package":"Micro-I","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"0","Ct{Cj} Nom. (F) Junction Cap.":"8.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...
818 Bytes - 13:06:40, 11 March 2025
