Product Datasheet Search Results:
1 Pages, 61 KB, Scan- GC1757
- Api Electronics Group
- VHF-UHF BAND, 3.3 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
2 Pages, 117 KB, Scan- GC1757
- Msi Electronics, Inc.
- 60V Vrrm, 3.3pF Capacitance Varactor Diode
2 Pages, 117 KB, Scan- GC1757B
- Msi Electronics, Inc.
- 60V Vrrm, 3.3pF Capacitance Varactor Diode
2 Pages, 117 KB, Scan- GC1757BCHIP
- Msi Electronics, Inc.
- 60V Vrrm, 3.3pF Capacitance Varactor Diode
2 Pages, 117 KB, Scan- GC1757C
- Msi Electronics, Inc.
- 60V Vrrm, 3.3pF Capacitance Varactor Diode
2 Pages, 117 KB, Scan- GC1757CCHIP
- Msi Electronics, Inc.
- 60V Vrrm, 3.3pF Capacitance Varactor Diode
2 Pages, 117 KB, Scan- GC1757CHIP
- Msi Electronics, Inc.
- 60V Vrrm, 3.3pF Capacitance Varactor Diode
Product Details Search Results:
Apitech.com/GC1757
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"3.3 pF","Power Dissipation Limit-Max":"0.2500 W","Case Connection":"ISOLATED","Quality Factor-Min":"1...
1389 Bytes - 12:46:38, 25 December 2024
Various/GC1757
{"C1/C2 Min. Capacitance Ratio":"6.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"1.1k","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-35var","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"3.3p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
764 Bytes - 12:46:38, 25 December 2024
Various/GC1757B
{"C1/C2 Min. Capacitance Ratio":"6.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"1.1k","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-35var","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"3.3p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
769 Bytes - 12:46:38, 25 December 2024
Various/GC1757BCHIP
{"C1/C2 Min. Capacitance Ratio":"6.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"1.1k","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"3.3p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
744 Bytes - 12:46:38, 25 December 2024
Various/GC1757C
{"C1/C2 Min. Capacitance Ratio":"6.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"1.1k","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-35var","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"3.3p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
768 Bytes - 12:46:38, 25 December 2024
Various/GC1757CCHIP
{"C1/C2 Min. Capacitance Ratio":"6.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"1.1k","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"3.3p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
745 Bytes - 12:46:38, 25 December 2024
Various/GC1757CHIP
{"C1/C2 Min. Capacitance Ratio":"6.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"60","Semiconductor Material":"Silicon","Q Factor Min.":"1.1k","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"3.3p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
740 Bytes - 12:46:38, 25 December 2024
