Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"1255 ns","Collector Current-Max (IC)":"182 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"660 ns","EU RoHS Compliant":"Yes","Configuration":"SERIES, 2 ELEMENTS WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"182A","Configuration":"Half Bridge","Mounting Type":"Chassis Mount","Family":"IGBTs - Modules","Current - Collector Cutoff (Max)":"1mA","Series":"-","Package / Case":"INT-A-Pak","Vce(on) (Max) @ Vge, Ic":"3V @ 15V, 100A","Voltage - Collector Emitter Breakdown (Max)":"1200V","Supplier Device Package":"INT-A-PAK","Datasheets":"VS-GA100TS120UPbF","Power - Max":"520W","Standard Package":"15","Input":"Standard","Input Capacitance (Ci...