Product Datasheet Search Results:
9 Pages, 357 KB, Original- FSYC360D1
- Fairchild Semiconductor
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
8 Pages, 63 KB, Original- FSYC360D1
- Intersil Corporation
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
8 Pages, 110 KB, Original- FSYC360D1
- International Rectifier
- 21 A, 400 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Irf.com/FSYC360D1
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"63 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"4...
1476 Bytes - 20:43:04, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| DRD1360D14.pdf | 0.41 | 1 | Request |
