Product Datasheet Search Results:
- FS75R07W2E3_B11A
- Infineon Technologies
- IGBT Modules
Product Details Search Results:
Infineon.com/FS75R07W2E3_B11A
{"Gate-Emitter Leakage Current":"400 nA","Continuous Collector Current at 25 C":"95 A","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Factory Pack Quantity":"15","Series":"FS75R07W2","Brand":"Infineon Technologies","Pd - Power Dissipation":"275 W","Product":"IGBT Silicon Modules","Collector- Emitter Voltage VCEO Max":"650 V","Packaging":"Tray","Maximum Gate Emitter Voltage":"+/- 20 V","Mounting Style":"Through Hole","Package / Case":"EasyPack1B","Collector-Emitter Saturation Vol...
1733 Bytes - 23:00:32, 28 March 2025